TPCP8H02

2006-11-13

1

TOSHIBA Multi-Chip Transistor

Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H02

STROBE FLASH APPLICATIONS

HIGH-SPEED SWITCHING APPLICATIONS

DC-DC CONVERTER APPLICATIONS

・

Multi-chip discrete device; built-in NPN transistor for main switch and

N-ch MOS FET for drive

・

・

(NPN transistor)

・

Transistor

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

50

Collector-emitter voltage

30

V

Emitter-base voltage

6

V

DC (Note 1)

3.0

Collector current

Pulse (Note 1)

5.0

A

Base current

0.3

A

Collector power dissipation (NPN)

1.0

W

Junction temperature

150

°C

MOS FET

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±

10

V

DC

100

Drain Current

Pulse

200

mA

Channel Temperature

150

°C

Note 1: Ensure that the junction (channel) temperature does not exceed 150℃.

Note 2: Device mounted on a glass-epoxy board (FR-4,25.4×25.4×1.6 mm , Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

1. SOURCE

2. COLLECTOR

3. COLLECTOR

4. COLLECTOR

5. BASE

6. EMITTER

7. GATE

8. DRAIN

JEDEC

-

JEITA

-

TOSHIBA

2-3V1E

Circuit Configuration

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1

2

3

4

8

7

6

5