TS103ACS

Taiwan Semiconductor

2

Version: E2103

ABSOLUTE MAXIMUM RATINGS (Note 1)

PARAMETER

SYMBOL

LIMIT

UNIT

Power Supply Voltage (V

CC

to GND)

V

CC

20

V

Op Amp 1 and 2 Input Voltage Range

(Pins 2,5,6)

V

IN

-0.3 to V

CC

+0.3

V

Op Amp 2 Input Differential Voltage

(Pins 5,6)

V

ID

20

V

Voltage Reference Cathode Current

(Pin 3)

I

K

100

mA

Power Dissipation

P

D

500

mW

Storage Temperature Range

T

STG

-65 to 150

°C

ESD Protection Voltage (Machine Model)

--

≥200

V

RECOMMENDED OPERATING CONDITIONS (Note 3)

PARAMETER

SYMBOL

CONDITIONS

UNIT

Supply Voltage

VCC

3 ~ 18

V

Operating Ambient Temperature Range

TOPA

-40 to +85

°C

ELECTRICAL SPECIFICATIONS (V

CC = 18V, TA = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Total Supply Current, excluding

Current in Voltage Reference

V

CC

= 5V, no load,

-

40°C ≤ T

A

≤ 85°C

--

0.5

0.8

mA

V

CC

= 18V, no load,

-40°C

≤ T

A

≤ 85°C

--

0.6

1.2

Voltage Reference Section

Reference Voltage

I

KA

= 10mA

2.490

2.500

2.510

V

I

KA

= 10mA @ -

40°C ≤ T

A

≤ 85°C

2.475

2.500

2.525

Reference Voltage Deviation

Over Full Temperature Range

I

KA

= 10mA,

T

A

= -40 to 85°C

--

--

5

5

24

17

mV

Minimum Cathode Current

for Regulation

--

0.2

1.0

mA

Dynamic Impedance

V

CC

= 1~80mA, f<1kHz

0.3

0.5

Ω

OP AMP 1 Section (VCC = 5V, VO= 1.4V, TA = 25°C, unless otherwise noted)

Input Offset Voltage

--

0.5

2

mV

TA = -40 to 85°C

--

--

5

Input Offset Voltage

Temperature Drift

TA = -40 to 85°C

--

7

--

µV/°C

Input Bias Current

(Inverting Input Only)

TA = 25°C

--

20

150

nA

Large Signal Voltage Gain

V

CC

= 15V, R

L

= 2kΩ,

V

O

= 1.4 to 11.4V

85

100

--

dB