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M58BW016DB Datasheet(PDF) 30 Page - STMicroelectronics |
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M58BW016DB Datasheet(HTML) 30 Page - STMicroelectronics |
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30 / 69 page ![]() Command interface M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 30/69 4.6 Block Erase command The Block Erase command can be used to erase a block. It sets all of the bits in the block to ‘1’. All previous data in the block is lost. If the block is protected then the erase operation will abort, the data in the block will not be changed and the Status Register will output the error. Two Bus Write operations are required to issue the command; the first write cycle sets up the Block Erase command, the second write cycle confirms the Block Erase command and latches the block address in the Program/Erase controller and starts it. The sequence is aborted if the Confirm command is not given and the device will output the Status Register Data with bits 4 and 5 set to '1'. Once the command is issued subsequent Bus Read operations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Erase operation the memory will only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. The command can be executed using either VDD (for a normal erase operation) or VPP (for a fast erase operation). If VPP is in the VPPH range when the command is issued then a fast erase operation will be executed, otherwise the operation will use VDD. If VPP goes below the VPP Lockout voltage, VPPLK, during a fast erase the operation aborts, the Status Register VPP Status bit is set to ‘1’ and the command must be re-issued. Typical Erase times are given in Table 10. See Appendix B: Flowcharts, Figure 23: Block Erase flowchart and pseudocode, for a suggested flowchart on using the Block Erase command. 4.7 Program command The Program command is used to program the memory array. Two Bus Write operations are required to issue the command; the first write cycle sets up the Program command, the second write cycle latches the address and data to be programmed in the Program/Erase controller and starts it. A program operation can be aborted by writing FFFFFFFFh to any address after the program set-up command has been given. Once the command is issued subsequent Bus Read operations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Program operation the memory will only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. If Reset/Power-down, RP, falls to VIL during programming the operation will be aborted. The command can be executed using either VDD (for a normal program operation) or VPP (for a fast program operation). If VPP is in the VPPH range when the command is issued then a fast program operation will be executed, otherwise the operation will use VDD. If VPP goes below the VPP Lockout voltage, VPPLK, during a fast program the operation aborts and the Status Register VPP Status bit is set to ‘1’. As data integrity cannot be guaranteed when the program operation is aborted, the memory block must be erased and reprogrammed. See Appendix B: Flowcharts on page 58, Figure 21: Program flowchart and pseudocode, for a suggested flowchart on using the Program command. |
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