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M58BW016DB Datasheet(PDF) 30 Page - STMicroelectronics

Part # M58BW016DB
Description  16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
PDF  69 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BW016DB Datasheet(HTML) 30 Page - STMicroelectronics

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Command interface
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
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4.6
Block Erase command
The Block Erase command can be used to erase a block. It sets all of the bits in the block to
‘1’. All previous data in the block is lost. If the block is protected then the erase operation will
abort, the data in the block will not be changed and the Status Register will output the error.
Two Bus Write operations are required to issue the command; the first write cycle sets up
the Block Erase command, the second write cycle confirms the Block Erase command and
latches the block address in the Program/Erase controller and starts it. The sequence is
aborted if the Confirm command is not given and the device will output the Status Register
Data with bits 4 and 5 set to '1'.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits. During the Erase operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
The command can be executed using either VDD (for a normal erase operation) or VPP (for a
fast erase operation). If VPP is in the VPPH range when the command is issued then a fast
erase operation will be executed, otherwise the operation will use VDD. If VPP goes below
the VPP Lockout voltage, VPPLK, during a fast erase the operation aborts, the Status
Register VPP Status bit is set to ‘1’ and the command must be re-issued.
Typical Erase times are given in Table 10.
See Appendix B: Flowcharts, Figure 23: Block Erase flowchart and pseudocode, for a
suggested flowchart on using the Block Erase command.
4.7
Program command
The Program command is used to program the memory array. Two Bus Write operations are
required to issue the command; the first write cycle sets up the Program command, the
second write cycle latches the address and data to be programmed in the Program/Erase
controller and starts it. A program operation can be aborted by writing FFFFFFFFh to any
address after the program set-up command has been given.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits. During the Program operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
If Reset/Power-down, RP, falls to VIL during programming the operation will be aborted.
The command can be executed using either VDD (for a normal program operation) or VPP
(for a fast program operation). If VPP is in the VPPH range when the command is issued then
a fast program operation will be executed, otherwise the operation will use VDD. If VPP goes
below the VPP Lockout voltage, VPPLK, during a fast program the operation aborts and the
Status Register VPP Status bit is set to ‘1’. As data integrity cannot be guaranteed when the
program operation is aborted, the memory block must be erased and reprogrammed.
See Appendix B: Flowcharts on page 58, Figure 21: Program flowchart and pseudocode, for
a suggested flowchart on using the Program command.



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