ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH

FN6475 Rev 4.00

Page 8 of 11

June 27, 2014

Die Characteristics

DIE DIMENSIONS:

52.8 mils x 52.0 mils x 14 mils ±1 mil

1340µm x 1320µm x 355.6µm ±25.4µm

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 4k

Å 0.5kÅ

Top Metallization:

Type: Metal 1: AlCu (2%)/TiW

Thickness: Metal 1: 8k

Å ±0.5kÅ

Type: Metal 2: AlCu (2%)

Thickness: Metal 2: 16k

Å ±0.8kÅ

Substrate:

UHF-1X Bonded Wafer, DI

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Floating

ADDITIONAL INFORMATION:

Worst Case Current Density:

3.04 x 105A/cm2

Transistor Count:

5

Metallization Mask Layout

FIGURE 13. ISL73096RH, ISL73096EH

FIGURE 14. ISL73127RH, ISL73127EH

(1) Q1C

(2) Q2C

(3) Q2E

(4) Q2B

(5) NC

(6) Q3C

(7) Q3E

(8) Q3B (9) Q4B (10) Q4E

(11) Q4C

(12) Q5C

(13) Q5E

(14) Q5B

(15) Q1B

(16) Q1E