FN6475 Rev 4.00

Page 1 of 11

June 27, 2014

FN6475

Rev 4.00

June 27, 2014

ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,

ISL73128EH

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

DATASHEET

The ISL73096, ISL73127 and ISL73128 are radiation

hardened bipolar transistor arrays. The ISL73096 consists of

three NPN transistors and two PNP transistors on a common

substrate. The ISL73127 consists of five NPN transistors on a

common substrate. The ISL73128 consists of five PNP

transistors on a common substrate.

The ISL73096EH, ISL73127EH and ISL73128EH devices

encompass all of the production testing of the ISL73096RH,

ISL73127RH and ISL73128RH devices and additionally are

tested in the Intersil Enhanced Low Dose Rate Sensitivity

(ELDERS) product manufacturing flow.

One of our bonded wafer, dielectrically isolated fabrication

processes provides an immunity to single event latch-up and

the capability of highly reliable performance in a radiation

environment.

The high gain-bandwidth product and low noise figure of these

transistors make them ideal for use in high frequency

amplifier and mixer applications. Monolithic construction of

the NPN and PNP transistors provides the closest electrical

and thermal matching possible. Access is provided to each

terminal of the transistors for maximum application flexibility.

Related Literature

• AN1503, Amplifier Design Using ISL73096RH,

ISL73127RH, ISL73128RH Transistor Arrays

• TID REPORT for the Radiation Hardened UHF NPN/PNP

transistor array

Features

• Electrically screened to SMD # 5962-07218

• QML qualified per MIL-PRF-38535 requirements

• Radiation tolerance

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*

- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation

• NPN gain bandwidth product (FT) . . . . . . . . . . . . . . 8GHz (typ)

•NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)

•NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)

• PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ)

•PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)

•PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)

•Noise figure (50

) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)

• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)

• Complete isolation between transistors

* Limit established by characterization.

Applications

• High frequency amplifiers and mixers

•High frequency converters

•Synchronous detector

FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW

DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE

(HDR) TO 300krads(Si)

FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW

DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE

(HDR) TO 300krads(Si)

80

85

90

95

100

105

110

115

120

0

50

100

150

200

250

300

krad(Si)

40

45

50

55

60

65

70

75

0

50

100

150

200

250

300

krad(Si)