EV-ADF4108EB2Z datasheet(6/20 Pages) AD

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ADF4108

Data Sheet

Rev. E | Page 6 of 20

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDD to GND1

−0.3 V to +3.9 V

AVDD to DVDD

−0.3 V to +0.3 V

VP to GND

−0.3 V to +5.8 V

VP to AVDD

−0.3 V to +5.8 V

Digital I/O Voltage to GND

−0.3 V to VDD + 0.3 V

Analog I/O Voltage to GND

−0.3 V to VP + 0.3 V

REFIN, RFINA, RFINB to GND

−0.3 V to VDD + 0.3 V

RFINA to RFINB

±600 mV

Operating Temperature Range

Industrial (B Version)

−40°C to +85°C

Storage Temperature Range

−65°C to +125°C

Maximum Junction Temperature

150°C

CSP θJA Thermal Impedance

(Paddle Soldered)

30.4°C/W

Reflow Soldering

Peak Temperature (60 sec)

260°C

Time at Peak Temperature

40 sec

Transistor Count

CMOS

6425

Bipolar

303

GND = AGND = DGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <2 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

ESD CAUTION

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