E3M0075120D

3

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The information in this document is subject to change without notice.

Rev. 5, March 2025

Reverse Diode Characteristics (T

C = 25˚C unless otherwise specified)

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

VSD

Diode Forward Voltage

4.8

V

V

GS = -4 V, ISD = 9 A, TJ = 25 °C

Fig. 8,

9, 10

4.2

V

V

GS = -4 V, ISD = 9 A, TJ = 175 °C

IS

Continuous Diode Forward Current

27

A

V

GS = -4 V, TC = 25˚C

IS, pulse

Diode pulse Current

80

A

V

GS = -4 V, pulse width tP limited by Tjmax

t

rr

Reverse Recover time

34

ns

V

GS = -4 V, ISD = 20 A, VR = 800 V

dif/dt = 885 A/µs, T

J = 175 °C

Q

rr

Reverse Recovery Charge

286

nC

I

rrm

Peak Reverse Recovery Current

13

A

t

rr

Reverse Recover time

40

ns

V

GS = -4 V, ISD = 20 A, VR = 800 V

dif/dt = 740 A/µs, T

J = 175 °C

Q

rr

Reverse Recovery Charge

256

nC

I

rrm

Peak Reverse Recovery Current

9

A

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

RθJC

Thermal Resistance from Junction to Case

0.88

1.03

°C/W

Fig. 21