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The information in this document is subject to change without notice.

Rev. 5, March 2025

Features

•

3rd generation SiC MOSFET technology

•

High blocking voltage with low on-resistance

•

High-speed switching with low capacitances

•

Fast intrinsic diode with low reverse recovery (Q

rr)

•

Halogen free, RoHS compliant

•

Automotive Qualified (AEC-Q101) and PPAP Capable

Benefits

•

Higher system efficiency

•

Reduce cooling requirements

•

Increase power density

•

Increase system switching frequency

Typical Applications

•

EV Battery Chargers

•

High Voltage DC/DC Converters

Package

1

2

3

Part Number

Package

Marking

E3M0075120D

TO-247-3L

E3M0075120D

Maximum Ratings (T

C = 25 ˚C unless otherwise specified)

Symbol

Parameter

Value

Unit

Note

VDSmax

Drain - Source Voltage

1200

V

VGSmax

Gate - Source Voltage

-8/+19

V

Note: 1

ID

Continuous Drain Current, VGS = 15 V

TC = 25˚C

32

A

Fig. 19

Note: 2

TC = 100˚C

23

ID(pulse)

Pulsed Drain Current, Pulse width tP limited by Tjmax

80

A

Fig. 22

P

D

Power Dissipation, T

C=25˚C, TJ = 175 ˚C

145

W

Fig. 20

Note: 2

T

J , Tstg

Operating Junction and Storage Temperature

-55 to

+175

˚C

T

L

Solder Temperature, 1.6mm (0.063”) from case for 10s

260

˚C

Md

Mounting Torque , M3 or 6-32 screw

1

8.8

Nm

lbf-in

Note (1): Recommended turn off / turn on gate voltage V

GS - 4V...0V / +15V

Note (2): Verified by design

E3M0075120D

Silicon Carbide Power MOSFET

E-Series Automotive

N-Channel Enhancement Mode