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ISL73847SEHDEMO2Z Datasheet(PDF) 36 Page - Renesas Technology Corp

Part # ISL73847SEHDEMO2Z
Description  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z Datasheet(HTML) 36 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 36
Jan 31, 2025
ISL73041SEH Datasheet
LGL
11 (b)
2529.14
688.13
110
110
1.25
LGH
12 (a)
2529.14
943.20
110
110
1.25
LGH
12 (b)
2529.14
1193.42
110
110
1.25
PHS
13 (a)
2529.14
1448.71
110
110
1.25
PHS
13 (b)
2529.14
1698.42
110
110
1.25
UGL
14 (a)
2523.5
1954.00
110
110
1.25
UGL
14 (b)
2523.5
2204.00
110
110
1.25
UGH
15 (a)
2204.00
2529.14
110
110
1.25
UGH
15 (b)
1954.00
2529.14
110
110
1.25
BOOT
16 (a)
1504.48
2529.14
110
110
1.25
BOOT
16 (b)
1254.48
2529.14
110
110
1.25
SGND
PAD
169.99
175.36
110
110
1.25
1. Origin of coordinate is the bottom left hand corner of die.
2. Pads 9 through 16 have double bond pads denoted as (a) and (b). Pad number designation intentionally assigned to match package pin
number.
Table 3. Layout X-Y Coordinates (Centroid of Bond Pad)[1] (Cont.)
Pad Name
Pad
Number[2]
X Coordinate
(µm)
Y
Coordinate
(µm)
Pad X
Dimension
(µm)
Pad Y
Dimension
(µm)
Bond Wire Diameter
(0.001”)



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