LM5025B

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SNVS354B – JULY 2005 – REVISED MARCH 2013

Electrical Characteristics

(1) (continued)

Specifications with standard typeface are for TJ = 25°C, and those with boldface type apply over full Operating Junction

Temperature range. VIN = 48V, VCC = 10V, RT = 26.7kΩ, RSET = 27.4kΩ) unless otherwise stated

Symbol

Parameter

Conditions

Min

Typ

Max

Units

UVLO Shutdown

Undervoltage Shutdown

2.44

2.5

2.56

V

Threshold

Undervoltage Shutdown

16

20

24

µA

Hysteresis

Output Section

OUT_A High Saturation

MOS Device @ Iout = -10mA,

5

10

Ω

OUTPUT_A Peak Current

Bipolar Device @ Vcc/2

3

A

Sink

OUT_A Low Saturation

MOS Device @ Iout = 10mA,

6

9

Ω

OUTPUT_A Rise Time

Cgate = 2.2nF

20

ns

OUTPUT_A Fall Time

Cgate = 2.2nF

15

ns

OUT_B High Saturation

MOS Device @ Iout = -10mA,

10

20

Ω

OUTPUT_B Peak Current

Bipolar Device @ Vcc/2

1

A

Sink

OUT_B Low Saturation

MOS Device @ Iout = 10mA,

12

18

Ω

OUTPUT_B Rise Time

Cgate = 1nF

20

ns

OUTPUT_B Fall Time

Cgate = 1nF

15

ns

Output Timing Control

Overlap Time

RSET = 38 kΩ connected to

75

105

135

ns

GND, 50% to 50% transitions

Deadtime

RSET = 29.5 kΩ connected to

75

105

135

ns

REF, 50% to 50% transitions

Thermal Shutdown

TSD

Thermal Shutdown

165

°C

Threshold

Thermal Shutdown

25

°C

Hysteresis

Thermal Resistance

θJA

Junction to Ambient

PW Package

125

°C/W

NHQ Package

32

°C/W

θJC

Junction to Case

PW Package

30

°C/W

NHQ Package

5

°C/W

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