NCP1607

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4

ELECTRICAL CHARACTERISTICS

(For typical values, TJ = 25°C. For min/max values, TJ = −40°C to +125°C, unless otherwise specified,

VCC = 12 V, VFB = 2.4 V, VCS = 0 V, VCONTROL = open, VZCD = open, CDRV = 1 nF, CT = 1 nF)

Characteristics

Symbol

Min

Typ

Max

Unit

VCC UNDERVOLTAGE LOCKOUT SECTION

VCC Startup Threshold (Undervoltage Lockout Threshold, Vcc rising)

−25

°C < TJ < +125°C

−40

°C < TJ < +125°C

VCC(on)

11.0

10.9

11.8

11.8

13.0

13.1

V

VCC Disable Voltage after Turn On (Undervoltage Lockout Threshold, VCC falling)

−25

°C < TJ < +125°C

−40

°C < TJ < +125°C

VCC(off)

8.7

8.5

9.5

9.5

10.3

10.5

V

Undervoltage Lockout Hysteresis

HUVLO

2.2

2.5

2.8

V

DEVICE CONSUMPTION

ICC consumption during startup: 0 V < VCC < VCC(on) − 200 mV

ICC(startup)

−

23.5

40

mA

ICC consumption after turn on at No Load, 70 kHz switching

ICC1

−

1.4

2.0

mA

ICC consumption after turn on at 70 kHz switching

ICC2

−

2.17

3.0

mA

ICC consumption after turn on at no switching

(such as during OVP fault, UVP fault, or grounding ZCD)

ICC(fault)

−

1.2

1.6

mA

REGULATION BLOCK (ERROR AMPLIFIER)

Voltage Reference

TJ = 25 °C

−25

°C < TJ < +125°C

−40

°C < TJ < +125°C

VREF

2.475

2.465

2.460

2.50

2.50

2.50

2.525

2.535

2.540

V

VREF Line Regulation from VCC(on) + 200 mV < VCC < 20 V, TJ = 25°C

VREF(line)

−2.0

−

2.0

mV

Error Amplifier Current Capability: (Note 3)

Sink (VControl = 4 V, VFB = 2.6 V):

Source (VControl = 4 V, VFB = 2.4 V):

IEA

8.0

−2.0

17

−6.0

−

−

mA

Error Amplifier Open Loop DC Gain (Note 4)

GOL

−

80

−

dB

Unity Gain Bandwidth (Note 4)

BW

−

1.0

−

MHz

FB Bias Current (VFB = 2.5 V)

IFB

0.25

0.53

1.25

mA

FB Pull Down Resistor (VFB = 2.5 V)

RFB

2.0

4.7

10

M

W

Control Pin Bias Current (FB = 0 V and VCONTROL = 4.0 V)

ICONTROL

−1.0

−

1.0

mA

VCONTROL (IEASOURCE = 0.5 mA, VFB = 2.4 V)

VEAH

4.9

5.3

5.7

V

VCONTROL (IEASINK = 0.5 mA, VFB = 2.6 V)

VEAL

1.85

2.1

2.4

V

VEA(diff) = VEAH − VEAL

VEA(diff)

3.0

3.2

3.4

V

CURRENT SENSE BLOCK

Overcurrent Voltage Threshold

VCS(limit)

0.45

0.5

0.55

V

Leading Edge Blanking Duration

tLEB

150

256

350

ns

Overcurrent Voltage Propagation Delay

tCS

40

100

170

ns

CS Bias Current (VCS = 2 V)

ICS

−1.0

−

1.0

mA

ZERO CURRENT DETECTION

Zero Current Detection Threshold (VZCD rising)

VZCDH

1.9

2.1

2.3

V

Zero Current Detection Threshold (VZCD falling)

VZCDL

1.45

1.6

1.75

V

VZCDH − VZCDL

VZCD(HYS)

300

500

800

mV

Maximum ZCD bias Current (VZCD = 5 V)

IZCD

−2.0

−

+2.0

mA

Upper Clamp Voltage (IZCD = 2.5 mA)

VCL(POS)

5.0

5.7

6.5

V

Current Capability of the Positive Clamp at VZCD = VCL(POS) + 200 mV:

ICL(POS)

5.0

8.5

−

mA

Negative Active Clamp Voltage (IZCD = −2.5 mA)

VCL(NEG)

0.45

0.6

0.75

V

3. Parameter values are valid for transient conditions only.

4. Parameter characterized and guaranteed by design, but not tested in production.