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NCP1607BDR2G. Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCP1607BDR2G.
Description  Cost Effective Power Factor Controller
PDF  23 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1607BDR2G. Datasheet(HTML) 5 Page - ON Semiconductor

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NCP1607
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5
ELECTRICAL CHARACTERISTICS
(For typical values, TJ = 25°C. For min/max values, TJ = −40°C to +125°C, unless otherwise specified,
VCC = 12 V, VFB = 2.4 V, VCS = 0 V, VCONTROL = open, VZCD = open, CDRV = 1 nF, CT = 1 nF)
Characteristics
Unit
Max
Typ
Min
Symbol
Current Capability of the Negative Active Clamp:
in normal mode (VZCD = 300 mV)
in shutdown mode (VZCD = 100 mV)
ICL(NEG)
2.5
35
3.7
70
5.0
100
mA
mA
Shutdown Threshold (VZCD falling)
VSDL
150
205
250
mV
Enable Threshold (VZCD rising)
VSDH
−
290
350
mV
Shutdown Comparator Hysteresis
VSD(HYS)
−
85
−
mV
Zero Current Detection Propagation Delay
tZCD
−
100
170
ns
Minimum Detectable ZCD Pulse Width
tSYNC
−
70
−
ns
Drive off Restart Timer
tSTART
75
179
300
ms
RAMP CONTROL
Ct Charge Current (VCT = 0 V)
−25
°C < TJ < +125°C
−40
°C < TJ < +125°C
ICHARGE
243
235
270
270
297
297
mA
Time to discharge a 1 nF Ct capacitor from VCT = 3.4 V to 100 mV.
tCT(discharge)
−
−
100
ns
Maximum Ct level before DRV switches off
−25
°C < TJ < +125°C
−40
°C < TJ < +125°C
VCTMAX
2.9
2.9
3.2
3.2
3.3
3.4
V
PWM Propagation Delay
tPWM
−
142
220
ns
OVER AND UNDERVOLTAGE PROTECTION
Dynamic Overvoltage Protection (OVP) Triggering Current:
TJ = 25°C
TJ = −40°C to +125°C
IOVP
9.0
8.7
10.5
−
11.8
12.1
mA
Hysteresis of the dynamic OVP current before the OVP latch is released
IOVP(HYS)
−
8.5
−
mA
Static OVP Threshold Voltage
VOVP
−
VEAL +
100 mV
−
V
Undervoltage Protection (UVP) Threshold Voltage
VUVP
0.25
0.302
0.4
V
GATE DRIVE SECTION
Gate Drive Resistance:
ROH @ ISOURCE = 100 mA
ROL @ ISINK = 100 mA
ROH
ROL
−
−
12
6.0
18
10
W
Drive voltage rise time from 10% VCC to 90% VCC
trise
−
30
80
ns
Drive voltage fall time from 90% VCC to 10% VCC
tfall
−
25
70
ns
Driver output voltage at VCC = VCC(on) − 200 mV and Isink = 10 mA
VOUT(start)
−
−
0.2
V
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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