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ADRF5422BCZ Datasheet(PDF) 4 Page - Analog Devices

Part # ADRF5422BCZ
Description  Die on Carrier, Silicon SPDT Switch, Nonreflective, 100 MHz to 55 GHz
PDF  13 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADRF5422BCZ Datasheet(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5422
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 13
Table 1. Electrical Specifications (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
EN
33
µA
RECOMMENDED OPERATING CONDITONS
Positive Supply Voltage
VDD
3.15
3.45
V
Negative Supply Voltage
VSS
−3.45
−3.15
V
Digital Control Input Voltage
VCTRL
0
VDD
V
RF Input Power2, 3
PIN
f = 250 MHz to 40 GHz and TCASE = 85°C
Through Path
RF signal is applied to the RFC or through connected
RF1 and RF2
30
dBm
Terminated Path
RF signal is applied to unselected RF1 or unselected
RF2
24
dBm
Hot Switching
RF signal is applied to the RFC while switching
between RF1 and RF2
30
dBm
Case Temperature
TCASE
−40
+105
°C
1 For input linearity performance over frequency, see Figure 2 and Figure 3.
2 For power derating over frequency, see Figure 2 and Figure 3.
3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.
SINGLE-SUPPLY OPERATION
VDD = 3.3 V, VSS = 0 V, VCTRL and VEN = 0 V or VDD, TCASE = 25°C, and 50 Ω system, unless otherwise noted.
Table 2. Single-Supply Operation Specifications
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
f
0.1
55
GHz
SWITCHING CHARACTERISTICS
Rise Time and Fall Time
tRISE and
tFALL
10% to 90% of RFOUT
22
ns
On Time and Off Time
tON and tOFF 50% VCTRL to 90% of RFOUT
65
ns
0.1 dB RF Settling Time
50% VCTRL to 0.1 dB of final RFOUT
90
ns
INPUT LINEARITY
f = 250 MHz to 40 GHz
0.1 dB Power Compression
P0.1dB
17
dBm
Input Third-Order Intercept
IIP3
Two-tone input power = 0 dBm each tone and Δf =
1 MHz
44
dBm
RECOMMENDED OPERATING CONDITONS
RF Input Power1, 2
PIN
f = 250 MHz to 40 GHz and TCASE = 85°C
Through Path
RF signal is applied to the RFC or through
connected RF1 and RF2
17
dBm
Terminated Path
RF signal is applied to unselected RF1 or
unselected RF2
12
dBm
Hot Switching
RF signal is applied to the RFC while switching
between RF1 and RF2
17
dBm
1 For power derating over frequency, see Figure 2 and Figure 3 .
2 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.



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