AM1517-025 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	AM1517-025

Description	RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 8 page

1/8

May 2000

AM1517-025

RF & MICROWAVE TRANSISTORS

SATELLITE COMMUNICATIONS APPLICATIONS

SO42

hermetically sealed

ORDER CODE

AM1517-025

BRANDING

1517-25

• REFRACTORY/GOLD METALLIZATION

• EMITTER SITE BALLASTED

•

∞:1 VSWR CAPABILITY

• LOW THERMAL RESISTANCE

• INPUT/OUTPUT MATCHING

• OVERLAY GEOMETRY

• METALLIC/CERAMIC HERMETIC PACKAGE

• POUT = 25 W MIN. WITH 8.5 dB GAIN

DESCRIPTION

The AM1517-025 power transistor is designed

specifically for Satellite communications applica-

tions in the 1.5 - 1.7 frequency range.

The device is capable of withstanding any mis-

match load condition at any phase angle (VSWR

∞:1) under full rated conditions. The unit is an

overlay, emitter site ballasted, geometry utilizing a

refractory/Gold metallization system.

The AM1517-025 is supplied in the AMPAC

TM

Hermetic/Ceramic package with internal Input/

Output matching structures.

PIN CONNECTION

1

4

3

2

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS(TCASE =25 0C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation* ( Tc

≤ 50 0C)

45

W

IC

Device Current*

2.5

A

VCC

Collector-Supply Voltage*

30

V

Tj

Junction Temperature

200

0C

TSTG

Storage Temperature

-65 to +200

0C

THERMAL DATA

Rth(j-c)

Junction-Case Thermal Resistance*

3.3

0C/W

* Applies only to rated RF amplifier operation

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