LM3475

SNVS239C – OCTOBER 2004 – REVISED OCTOBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

See

(1) (2)

MIN

MAX

UNIT

VIN

−0.3

16

V

PGATE

−0.3

16

V

FB

−0.3

5

V

EN

−0.3

16

V

Power dissipation (3)

440

mW

Vapor phase (60 s)

215

Lead temperature

°C

Infrared (15 s)

220

Tstg

Storage temperature

−65

1150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

The maximum allowable power dissipation is a function of the maximum junction temperature, TJ_MAX, the junction-to-ambient thermal

resistance,

θJA and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated

using: PD_MAX = (TJ_MAX - TA)/θJA. The maximum power dissipation of 0.44 W is determined using TA = 25°C, θJA = 225°C/W, and

TJ_MAX = 125°C.

6.2 ESD Ratings

over operating free-air temperature range (unless otherwise noted)

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

2500

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Ratings

MIN

NOM

MAX

UNIT

Supply voltage

2.7

10

V

TJ

Operating junction temperature

-40

125

°C

6.4 Thermal Information

LM3475

THERMAL METRIC(1)

DBV (SOT-23)

UNIT

5 PINS

RθJA

Junction-to-ambient thermal resistance

164.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

115.3

°C/W

RθJB

Junction-to-board thermal resistance

27.0

°C/W

ψJT

Junction-to-top characterization parameter

12.8

°C/W

ψJB

Junction-to-board characterization parameter

26.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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