Characteristics

STTH200R04TV

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1

Characteristics

When the diodes are used simultaneously:

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 1.

Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

400

V

Non repetitive peak reverse voltage

400

V

RMS forward current

Per diode

150

A

Average forward current,

δ = 0.5

Per diode

100

A

Per package

200

A

Repetitive peak forward current

2000

A

1000

A

Storage temperature range

-65 to + 150

°C

Maximum operating junction temperature

150

°C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Junction to case

Per diode

0.50

° C/W

Total

0.30

Coupling thermal resistance

0.1

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

80

µA

80

800

(2)

Forward voltage drop

1.35

V

0.95

1.2

0.87

1.1

1.

2.