STTH200R04TV datasheet(3/7 Pages) STMICROELECTRONICS

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STTH200R04TV

Characteristics

3/7

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

100

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -200 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 100 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125° C

QRR

Reverse recovery charges

IF = 100 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125° C

1500

2900

Softness factor

IF = 100 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125° C

0.4

tfr

Forward recovery time

IF = 100 A

dIF/dt = 100 A/µs

VFR = 1.5 x VFmax, Tj = 25° C

1000

VFP

Forward recovery voltage

IF = 100 A, dIF/dt = 100 A/µs,

Tj = 25° C

3.5

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

100

120

140

100

110

120

130

P(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

d=1

δ=tp/T

IF(AV)(A)

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

FM(A)

J=150°C

(Maximum values)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

J=25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

th(j-c)/Rth(j-c)

Single pulse

ISOTOP

tp(s)

100

1000

RM(A)

F= 100A

R=320V

j=125 °C

j=25 °C

dIF/dt(A/µs)

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