MB85RC64A

DS501-00019-5v2-E

13



POWER ON/OFF SEQUENCE

If VDD falls down below 2.0V, VDD is required to be started from 0V to prevent malfunctions when the power

is turned on again.

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.



NOTE ON USE

• We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.

• During the access period from the start condition to the stop condition, keep the level of WP, A0, A1 and

A2 pins to the “H” level or the “L” level.

Parameter

Symbol

Value

Unit

Min

Max

SDA, SCL level hold time during power down

tpd

85



ns

SDA, SCL level hold time during power up

tpu

85



ns

Power supply rising time

tr

10





s

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1012



Times/byte Operation Ambient Temperature TA   85 C

Data Retention*2

10



Years

Operation Ambient Temperature TA   85 C

95



Operation Ambient Temperature TA   55 C



200



Operation Ambient Temperature TA   35 C

0 V

SDA, SCL >VDD × 0.8 *

SDA, SCL >VDD × 0.8 *

tpd

tpu

tr

VIL (Max)

1.0 V

VIH (Min)

2.7 V

VDD

SDA, SCL : Don't care

SDA, SCL

SDA, SCL

0 V

VIL (Max)

1.0 V

VIH (Min)

2.7 V

VDD

* : SDA, SCL (Max) < VDD  0.5 V