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BYT200PIV-400 Datasheet(PDF) 2 Page - STMicroelectronics

Part # BYT200PIV-400
Description  ULTRAFAST POWER RECTIFIER DIODE
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BYT200PIV-400 Datasheet(HTML) 2 Page - STMicroelectronics

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BYT200PIV-400
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Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per leg
0.55
°C/W
Total
0.33
Rth (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25
°CVR =VRRM
120
µA
Tj = 100
°C
4
12
mA
VF **
Forward voltage drop
Tj = 25
°CIF = 100 A
1.6
V
Tj = 125
°CIF = 100 A
0.95
1.4
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
µs, duty cycle < 2%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF=0.5A
IR=1A
Irr=0.25A
IF=1A dI/dt= -50A/
µs
Vr=30V
55
100
ns
IRM
Reverse recovery current
dIF/dt=-200A/
µs
Tj=125
°C
VR=400V
IF=100A
40
A
S factor
Softness factor
dIF/dt=-200A/
µs
Tj=125
°C
VR=400V
IF=100A
0.25
tfr
Forward recovery time
IF=100A
dIF/dt=500A/
µs
Measured at 1.1 x VF max.
Tj=25
°C
500
ns
VFP
Peak forward voltage
12
V
To evaluate the conduction losses use the following equation :
P = 0.8 x IF(AV) + 0.00228 x IF
2
(RMS)
RECOVERY CHARACTERISTICS



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