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HS0-117RH/SAMPLE Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HS0-117RH/SAMPLE Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 16 page ![]() FN4560 Rev.11.01 Page 1 of 15 Aug 12, 2025 © 2001-2025 Renesas Electronics HS-117RH, HS-117EH Radiation Hardened Adjustable Positive Voltage Regulator DATASHEET The radiation hardened HS-117RH and HS-117EH are adjustable positive voltage linear regulators capable of operating with input voltages up to 40VDC. The HS-117EH encompasses all of the production testing of the HS-117RH and additionally is tested in the Enhanced Low Dose Rate Sensitivity (ELDRS) product manufacturing flow. The output voltage is adjustable from 1.25V to 37V with two external resistors. The device is capable of sourcing from 5mA to 1.25A max (0.5A max for the TO-39 package). Current protection is provided by the on-chip thermal shutdown and output current limiting circuitry. The HS-117xH's advantage over other industry types is its incorporated circuitry that minimizes the effects of radiation and temperature on device stability. The HS-117RH and HS-117EH are constructed in the dielectrically isolated Rad Hard Silicon Gate (RSG) process and are immune to single event latch-up and are specifically designed to provide highly reliable performance in harsh radiation environments. Applications • Adjustable voltage regulators • Adjustable current regulators Features • Electrically screened to DLA SMD # 5962-99547 • Superior temperature stability • Overcurrent and over-temperature protection • Wide input voltage range . . . . . . . . . . . . . . . . . . 4.25V to 40V • Operating temperature range. . . . . . . . . . . .-55°C to +125°C • QML qualified per MIL-PRF-38535 requirements • Radiation environment - SEL/SEB LETTH (VS = 40V) . . . . . . . . . . 87.4 MeV•cm2/mg - Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad(Si) - Total Dose, Low Dose Rate. . . . . . . . . . . . . . . 100krad(Si)* * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. Related Literature For a full list of related documents, visit our website • HS-117RH, HS-117EH device pages FIGURE 1. TYPICAL APPLICATION FIGURE 2. VOUT SHIFT vs HIGH and LOW DOSE RATE RADIATION OUTPUT R1 R2 C1 C2 VOUT = VREF (1+R2/R1) + IADJ R2 VIN VOUT HS-117EH IN ADJUST OUT 0 50 100 150 200 250 300 krad(Si) -0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 HIGH DOSE RATE LOW DOSE RATE |
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