5.9 Typical Characteristics (continued)

at AVDD = 5V, DVDD = 3.3V, VINP = –250mV to +250mV, INN = AGND, fCLKIN = 20MHz with 50% duty cycle, and sinc3 filter

with OSR = 256 (unless otherwise noted)

-40

-25

-10

5

20

35

50

65

80

95

110 125

Temperature (ºC)

80

83

86

89

92

95

Device 1

Device 2

Device 3

G060

Figure 5-27. Signal-to-Noise + Distortion vs Temperature

5

9

13

17

21

f

CLKIN(MHz)

80

83

86

89

92

95

Device 1

Device 2

Device 3

G036

Figure 5-28. Signal-to-Noise Ratio vs Clock Frequency

3

3.5

4

4.5

5

5.5

AVDD (V)

80

83

86

89

92

95

Device 1

Device 2

Device 3

G034

Figure 5-29. Signal-to-Noise Ratio vs High-Side Supply Voltage

0

50 100 150 200 250 300 350 400 450 500 550 600 650

V

IN,PP(mV)

50

55

60

65

70

75

80

85

90

95

Device 1

Device 2

Device 3

G032

Figure 5-30. Signal-to-Noise Ratio vs Input Signal Amplitude

0.01

0.1

1

10

100

f

IN(kHz)

50

55

60

65

70

75

80

85

90

95

Device 1

Device 2

Device 3

G033

Figure 5-31. Signal-to-Noise Ratio vs Input Signal Frequency

-40

-25

-10

5

20

35

50

65

80

95

110 125

Temperature (ºC)

80

83

86

89

92

95

Device 1

Device 2

Device 3

G035

Figure 5-32. Signal-to-Noise Ratio vs Temperature

AMC0106M25

SBASAX1A – AUGUST 2024 – REVISED JULY 2025

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