TS4962M_V01 datasheet(12/41 Pages) STMICROELECTRONICS

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Electrical characteristics

TS4962M

12/41

DocID11703 Rev 7

Table 7. VCC = 3 V, GND = 0 V, VIC = 2.5 V, Tamb = 25 °C (unless otherwise specified)

(1)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load

1.9

2.7

ISTBY

Standby current (2)

No input signal, VSTBY = GND

1000

VOO

Output offset voltage

No input signal, RL = 8Ω

Pout

Output power

G=6dB

THD = 1% max., F = 1 kHz, RL = 4 Ω

THD = 10% max., F = 1 kHz, RL = 4 Ω

THD = 1% max., F = 1 kHz, RL = 8 Ω

THD = 10% max., F = 1 kHz, RL = 8 Ω

0.75

0.5

0.6

THD + N

Total harmonic

distortion + noise

Pout = 350 mWRMS, G = 6 dB,

20 Hz < F < 20 kHz

RL = 8 Ω + 15 µH, BW < 30 kHz

Pout = 350 mWRMS, G = 6 dB, F = 1 kHz,

RL = 8 Ω + 15 µH, BW < 30 kHz

0.21

Efficiency Efficiency

Pout = 0.7 WRMS, RL = 4 Ω + ≥ 15 µH

Pout = 0.45 WRMS, RL = 8 Ω+ ≥ 15 µH

PSRR

Power supply

rejection ratio with

inputs grounded (3)

F = 217 Hz, RL = 8 Ω, G=6 dB,

Vripple = 200 mVpp

CMRR

Common-mode

rejection ratio

F = 217Hz, RL = 8Ω, G = 6 dB,

∆V

icm = 200 mVpp

Gain

Gain value

Rin in kΩ

V/V

RSTBY

Internal resistance

from Standby to GND

273

300

327

Ω

FPWM

Pulse width modulator

base frequency

180

250

320

kHz

SNR

Signal to noise ratio

A-weighting, Pout = 0.4 W, RL = 8 Ω

tWU

Wake-up time

tSTBY

Standby time

273k

Ω

------------------

300k

Ω

------------------

327k

Ω

------------------

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