MB97R8050

8

DS411-00005-4v0-E



ELECTRICAL CHARACTERISTICS

1. Absolute Maximum Rating

* ESD measurement condition: The die chip has been mounted into a QFN40 package.

WARNING: Semiconductor devices may be permanently damaged by application of stress (including, without

limitation, voltage, current or temperature) in excess of absolute maximum ratings.

Do not exceed any of these ratings.

2. Recommended Operation Conditions

WARNING: The recommended operating conditions are required in order to ensure the normal operation of

the semiconductor device. All of the device's electrical characteristics are warranted when the

device is operated under these conditions.

Any use of semiconductor devices will be under their recommended operating condition.

Operation under any conditions other than these conditions may adversely affect reliability of

device and could result in device failure.

No warranty is made with respect to any use, operating conditions or combinations not represented

on this data sheet. If you are considering application under any conditions other than listed herein,

please contact sales representatives beforehand.

Parameter

Symbol

Rating

Unit

Remarks

Min

Typ

Max

Maximum input voltage

VMAX





3.0

V

Between PWRP-PWRM

ESD voltage immunity*

VESD



2





2

kV

Human Body Model



100





100

V

Machine Model



750





750

V

Charged Device Model

Storage temperature

TSTG



40





85



C Excluding FeRAM data

retention guarantee

Parameter

Symbol

Value

Unit

Remarks

Min

Typ

Max

Operation ambient tem-

perature

Ta

-40



+55



C

Retention guarantee

temperature

Trtn1

-40



+55



C

Retention

guarantee period: 10years

Antenna input

frequency

Fclk

860



960

MHz According to the Radio Law

Reception modulation

depth

(A-B)/A

80

90

100

%

Data 0 symbol duration

Tari

6.25



25



s

Receiving waveform

rise time

Tr

1



500



s

Receiving waveform

settling time

Ts





1500



s

Receiving waveform

fall time

Tf

1



500



s