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STK615N4F8AG Datasheet(PDF) 6 Page - STMicroelectronics |
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STK615N4F8AG Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Typical on-resistance vs gate-source voltage GPDP111020240947VGS RDS(on) (mΩ) VGS (V) 1.6 1.2 0.8 0.4 0.0 0 4 8 12 TJ= 175 °C TJ= 25 °C Figure 8. Typical gate charge characteristics GPDP111020240948QVG VGS (V) Qg (nC) 9 6 3 0 0 30 60 90 120 150 ID = 180 A 32 V 20 V 8 V Figure 9. Typical capacitance characteristics GPDP111020240949CVR 10 4 10 3 10 2 10 1 0 10 20 30 40 C (pF) VDS (V) Ciss Coss Crss f = 1 MHz Figure 10. Avalanche characteristics GPDP111020240950ACH IAS (A) 101 100 10-1 100 101 102 103 104 105 TJ= 25 °C TJ= 150 °C TJ= 100 °C tav(μs) Figure 11. Avalanche energy GPDP111020240952EAS EAS (mJ) TJ (°C) 20000 15000 10000 5000 0 25 75 125 175 ID = 22 A ID = 45 A ID = 90 A Figure 12. Typical drain-source on-resistance GPDP111020240941RID RDS(on) (mΩ) ID (A) 0.4 0.2 0.0 20 40 60 80 100 120 VGS= 10 V STK615N4F8AG Electrical characteristics DS14222 - Rev 5 page 6/15 |
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