STPS20170C

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Table 3: Absolute Ratings (limiting values, per diode)

Table 4: Thermal Parameters

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 5 ms,

** tp = 380 µs,

To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF

2

(RMS)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

170

V

30

A

Average forward current

δ = 0.5

TO-220AB /

Per device

10

20

A

TO-220FPAB

Per diode

Per device

10

20

Surge non repetitive forward current

180

A

Repetitive peak avalanche power

6700

W

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature *

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

* :

thermal runaway condition for a diode on its own heatsink

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

2.2

1.3

°C/W

TO-220FPAB

Per diode

Total

4.5

3.5

Coupling

0.3

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously:

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

Reverse leakage current

15

µA

15

mA

Forward voltage drop

0.90

V

0.69

0.75

0.99

0.79

0.86

dPtot

dTj

---------------

1

Rth j

a

–

()

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