STPS20170C datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

STPS20170C

4/8

Figure

Relative

variation

thermal

impedance junction to case versus pulse

duration

Figure 8: Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Figure 9: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure

10: Forward voltage drop versus

forward current (per diode)

Figure 11: Thermal resistance junction to am-

bient versus copper surface under tab (epoxy

printed board FR4, Cu = 35µm) (D2PAK)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

t (s)

Z/R

th(j-c)

δ=tp/T

Single pulse

(TO-220FPAB)

(TO-220AB, I PAK and D PAK)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

100

125

150

175

I (µA)

V (V)

T =175°C

T =150°C

T =125°C

T =100°C

T =25°C

100

1000

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

(A)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T =125°C

(typical values)

T =125°C

(maximum values)

T =25°C

(maximum values)

(V)

S(cm²)

(°C/W)

th(j-a)

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