VNH3ASP30TR-E datasheet(21/34 Pages) STMICROELECTRONICS

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VNH3ASP30-E

Application information

3.1

Reverse battery protection

Three possible solutions can be considered:

a Schottky diode D connected to VCC pin

an N-channel MOSFET connected to the GND pin (see Figure 32: Typical application circuit

for DC to 20 kHz PWM operation short circuit protection on page 20)

a P-channel MOSFET connected to the VCC pin

The device sustains no more than -30 A in reverse battery conditions because of the two

body diodes of the power MOSFETs. Additionally, in reverse battery condition the I/Os of

Root part number 1 are pulled down to the VCC line (approximately -1.5 V). A series resistor

must be inserted to limit the current sunk from the microcontroller I/Os. If IRmax is the

maximum target reverse current through µC I/Os, the series resistor is:

Figure 33. Half-bridge configuration

Note:

The VNH3ASP30-E can be used as a high power half-bridge driver achieving an On

resistance per leg of 21 m

.

VIOs VCC

–

IRmax

---------------------------------

OUTA

OUTB

VCC

PWM

DIAGA/ENA

INA

DIAGB/ENB

INB

GNDB

GNDA

GNDB

GNDA

PWM

DIAGA/ENA

INA

DIAGB/ENB

INB

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