Table 9-1. Die and Wafer Characteristics

Fabrication Attributes

General Die Information

Physical Die Identification

LM567C

Bond Pad Opening Size (min)

91µm x 91µm

Die Step

C

Bond Pad Metalization

0.5% COPPER_BAL.

ALUMINUM

Physical Attributes

Passivation

VOM NITRIDE

Wafer Diameter

150mm

Back Side Metal

BARE BACK

Dise Size (Drawn)

1600µm x 1626µm

63.0mils x 64.0mils

Back Side Connection

Floating

Thickness

406µm Nominal

Min Pitch

198µm Nominal

Special Assembly Requirements:

Note: Actual die size is rounded to the nearest micron.

Die Bond Pad Coordinate Locations (C - Step)

(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used

SIGNAL NAME

PAD# NUMBER

X/Y COORDINATES

PAD SIZE

X

Y

X

Y

OUTPUT FILTER

1

-673

686

91

x

91

LOOP FILTER

2

-673

-419

91

x

91

INPUT

3

-673

-686

91

x

91

V+

4

-356

-686

91

x

91

TIMING RES

5

673

-122

91

x

91

TIMING CAP

6

673

76

91

x

91

GND

7

178

686

117

x

91

OUTPUT

8

-318

679

117

x

104

9.4 Device Functional Modes

9.4.1 Operation With Vi < 200m – VRMS

When the input signal is below a threshold voltage, typically 200m-VRMS, the bandwidth of the detection band

should be calculated Equation 2.

where

• Vi = Input voltage (volts rms), Vi ≤ 200mV

• C2 = Capacitance at Pin 2(μF)

LM567, LM567C

SNOSBQ4F – MAY 1999 – REVISED JANUARY 2022

www.ti.com

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