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SPC582B50E3 Datasheet(PDF) 102 Page - STMicroelectronics |
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SPC582B50E3 Datasheet(HTML) 102 Page - STMicroelectronics |
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102 / 111 page ![]() Revision history SPC582B60x, SPC582B54x, SPC582B50x 102/111 DS11597 Rev 5 7 Revision history Table 56. Document revision history Date Revision Changes 07-April-2016 1 Initial version. 29-Jun-2017 2 The following are the changes in this version of the Datasheet. – Removed QFN32 package from the document. – Replaced RPNs SPC582B60E1, SPC582B60E3, and SPC582B60Q2 with “SPC582B60x, SPC582B54x, and SPC582B50x” Table 1: Device summary: – Updated the table. Section 3.1: Introduction: – Removed text “The IPs and...for the details”. – Removed the two notes. Table 3: Parameter classifications: – Updated the description of classification tag “T”. Table 4: Absolute maximum ratings: – For parameter “IINJ”, text “DC” removed from description. – Added text “Exposure to absolute ... reliability” – Added text “even momentarily” – Updated values in conditions column. – Added parameter TTRIN. – For parameter “TSTG”, maximum value updated from “175” to “125” – Added new parameter “TPAS” – For parameter “IINJ”, description updated from “maximum...PAD” to “maximum DC...pad” Table 5: Operating Conditions: – Footnote “1.260 V - 1.290 V range .. temperature profile” updated to Text “... average supply value below or equal to 1.236 V ...” – For parameter “IINJ1” description, text “DC” removed. – For parameter “VDD_LV”, changed the classification from “D” to “P” – Removed note “Core voltage as ....” – Added parameter IINJ2. – Removed parameter “VRAMP_LV”. – Updated the table footnote “Positive and negative Dynamic current....” Table 6: Device supply relation during power-up/power-down sequence: –“VDD_HV_PMC” updated to “VDD_HV_OSC”. – Parameter “VDD_LV” removed Section 3.4: Electromagnetic emission characteristics: – Updated this section. |
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