Characteristics

STPS20170C

2/15

DocID10243 Rev 3

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward

current

δ = 0.5, square wave

TO-220AB /

D²PAK

TC = 155 °C

Per diode

10

A

TC = 150 °C

Total

20

TO-220FPAB

TC = 135 °C

Per diode

10

TC = 115 °C

Total

20

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

180

A

PARM

Repetitive peak avalanche power

tp = 10 µs,

Tj = 125 °C

480

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

175

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB / D²PAK

Per diode

2.2

°C/W

Total

1.3

TO-220FPAB

Per diode

4.5

Total

3.5

Rth(c)

Coupling

TO-220AB / D²PAK

0.3

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)