STPS20170C datasheet(4/15 Pages) STMICROELECTRONICS

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Characteristics

STPS20170C

4/15

DocID10243 Rev 3

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

(A )

F (AV)

= tp/T

= 0.05

= 0.1

= 0.2

= 0.5

= 1

PF(AV)(W)

100

125

150

175

(° C)

a mb

= tp/T

=15° C/W

th(j-a)

th(j-c) (TO -220FPAB )

th(j-a)

th(j-c)

(TO-220AB and D²PAK)

IF(AV)(A)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E- 03

1.E- 02

1.E- 01

1.E+ 00

t ( s )

= tp/T

TO-220FPAB

TO-220AB and D²PAK

Single pulse

Zth(j-c)/Rth(j-c)

1.E -01

1.E +00

1.E +01

1.E +02

1.E +03

1.E +04

1.E +05

100

125

150

175

V (V )

T = 175 °C

T = 150 °C

T = 125 °C

T = 100 °C

T = 25 °C

IR(µA)

100

1000

100

1000

V (V )

C(pF)

F = 1 MHz

OSC

= 30 mV

RMS

= 25 °C

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