General Purpose Transistor

Comchip Technology CO., LTD.

REV:A

Page 2

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TJ=25°C unless otherwise noted)

Collector-base breakdown voltage

IC = 0.1mA, IE = 0A

Collector-emitter breakdown voltage (Note 3)

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain (Note 3)

Collector-emitter saturation voltage (Note 3)

Base-emitter voltage (Note 3)

IC = 10mA, IB = 0A

IE = 10µA, IC = 0A

VCB = 30V, IE = 0A

VEB = 5V, IC = 0A

VCE = 2V, IC = 5mA

IC = 500mA, IB = 50mA

IC = 500mA, VCE = 2V

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

VBE

V

V

V

nA

nA

V

V

Part No.

Range

63~160

100~250

ABCX55-16-HF

Classification Of hFE(2)

Transition frequency

VCE = 5V, IC = 10mA, f = 100MHz

fT

MHZ

VCE = 2V, IC = 150mA

Typ

Typical Rating and Characteristic Curves (ABCX54/55/56-HF Series)

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

1

2

3

4

5

0

50

100

150

200

250

Fig.2 - hFE ― IC

1

10

100

1000

10

100

1000

Collector Current, IC (mA)

AQW-JTR92

ABCX54

ABCX55

ABCX56

ABCX54

ABCX55

ABCX56

hFE(2)

VCE = 2V, IC = 500mA

hFE(3)

45

60

100

45

60

80

5

100

100

250

63

40

25

0.5

1

130

Notes: 1. Measured with the device mounted on 1cm x 1cm x 0.8mm FR-4 board with no copper, in a still air environment with Ta=25°C.

2. Measured with the device mounted on 2.54cm x 2.54cm x 1.6mm FR-4 board with double sided 1oz copper, in a still air environment with Ta=25°C.

3. Pulse test.

Common emitter

Ta=25°C

IB= 0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

1.0mA

Ta=25°C

Common emitter

VCE= 2V

Ta=100°C

ABCX55-10-HF

ABCX54-10-HF

ABCX56-10-HF

ABCX54-16-HF

ABCX56-16-HF