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L4949EP Datasheet(PDF) 3 Page - STMicroelectronics |
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L4949EP Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() ELECTRICAL CHARACTERISTICS (VS = 14V; -40 °C< Tj < 125°C unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit VO Output Voltage TJ =25 °C; IO = 1mA 4.95 5 5.05 V VO Output Voltage 6V < VIN < 28V, 1mA < IO < 50mA 4.90 5 5.10 V VO Output Voltage VIN =40V; T < 1s 5mA < IO <100mA 4.75 5.25 V VDP Dropout Voltage IO = 10mA IO = 50mA IO = 100mA 0.1 0.2 0.3 0.25 0.4 0.5 V V V VIO Input to Output Voltage Difference in Undervoltage Condition VIN = 4V, IO = 35mA 0.4 V Iouth ** Max Output Leakage VIN = 25V, VO = 5.5V 20 50 80 µA VOL Line Regulation 6V < VIN < 28V; IO = 1mA 20 mV VOLO Load Regulation 1mA < IO < 100mA 30 mV ILIM Current Limit VO = 4.5V VO = 4.5V, TJ =25 °C VO = 0V (note 1) 105 120 200 100 400 400 mA mA mA IQSE Quiescent Current IO = 0.3mA; TJ < 100 °C 200 300 µA IQ Quiescent Current IO = 100mA 5 mA ** With this test we guarantee that with no output current the output voltage will not exceed 5.5V RESET VRT Reset Thereshold Voltage VO -0.5V V VRTH Reset Thereshold Hysteresis 50 100 200 mV tRD Reset Pulse Delay CT = 100nF; TR ≥100µs 55 100 180 ms VRL Reset Output Low Voltage RRES = 10K Ω to VO VS ≥ 1.5V 0.4 V IRH Reset Output High Leakage Current VRES =5V 1 µA VCTth Delay Comparator Thereshold 2 V VCTth, hy Delay Comparator Thereshold Hysteresis 100 mV SENSE Vst Sense Low Thereshold 1.16 1.23 1.35 V Vsth Sense Thereshold Hysteresis 20 100 200 mV VSL Sense Output Low Voltage VSI ≤ 1.16V; VS ≥ 3V RSO = 10K Ω to VO 0.4 V ISH Sense Output Leakage VSO = 5V; VSI ≥ 1.5V 1 µA ISI Sense Input Current VSI = 0 -20 -8 -3 µA PREREGULATOR VZ Preregulator Output Voltage IZ =10 µA 4.5 5 6 V IZ Preregulator Output Current 10 µA Note 1: Foldback characteristic L4949E 3/10 |
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