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TP65H030G4PWS Datasheet(PDF) 8 Page - Renesas Technology Corp |
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TP65H030G4PWS Datasheet(HTML) 8 Page - Renesas Technology Corp |
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8 / 13 page ![]() TP65H030G4PWS Datasheet R07DS1601EU0200 Rev.2.00 Nov 25, 2025 Page 8 Figure 8. Typical QOSS Figure 9. Typical Gate Charge IDS = 30A, VDS = 400V Figure 10. Power Dissipation Figure 11. Current Derating Pulse width ≤ 10µs, VGS ≥ 12V Figure 12. Forward Characteristics of Rev. Diode IS = f(VSD), Parameter: TJ Figure 13. Transient Thermal Resistance |
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