PRELIMINARY
CY22701
Document #: 38-07698 Rev. *B
Page 11 of 15
Absolute Maximum Conditions
Parameter
Description
Min.
Max.
Unit
VDD
Supply Voltage
–0.5
7.0
V
TS
Storage Temperature
–65
125
°C
TJ
Junction Temperature
–40
100
°C
Logic Inputs
VSS – 0.5
VDD + 0.5
V
I2C interface (SDAT and SCL)
–0.5
5.5
V
Digital Outputs referred to VDD
VSS – 0.5
VDD + 0.5
V
Electro-Static Discharge
2000
V
Endurance (@ 25°C)
1,000,000 (100k/page)
writes
Data retention
10
yrs
Recommended Operating Conditions
Parameter
Description
Min.
Typ.
Max.
Unit
VDD
Operating Voltage
3.135
3.3
3.465
V
TA
Ambient Temperature, Industrial grade
–40
–
85
°C
TA
Ambient Temperature, Commercial grade
0
–
70
°C
CLOAD
Max. Load Capacitance
–
–
15
pF
tPU
Power-up time for all VDDs to reach minimum specified voltage
(power ramps must be monotonic)
0.05
–
500
ms
DC Electrical Specifications
Parameter
Name
Description
Min.
Typ.
Max.
Unit
IOH
Output High Current[2]
VOH = VDD – 0.5, VDD = 3.3V
12
–
24
mA
IOL
Output Low Current[2]
VOL = 0.5, VDD = 3.3V
12
–
24
mA
VIH
Input High Voltage
CMOS levels
0.7 * VDD
––
V
VIL
Input Low Voltage
CMOS levels
–
–
0.3 * VDD
V
CIN
Input Capacitance[2, 3]
––7
pF
IIZ
Input Leakage Current
Except XTAL pins
–
–
10
µA
f∆XO
VCXO Pullability Range[3]
+150
–
–
ppm
IVDD
Supply Current
–
45
–
mA
ISB
Supply Current - Power
Down Mode Enabled
Current drawn while part is in
standby.
–5
40
µA
DC Electrical Specifications – 2.5V Outputs
Parameter
Name
Description
Min.
Typ.
Max.
Unit
IOH2.5
Output High Current[2, 4]
VOH = VDD – 0.5, VDD = 3.3 V
12
–
24
mA
IOL2.5
Output Low Current[2, 4]
VOL = 0.5, VDD = 3.3 V
12–24
mA
Notes:
2. Guaranteed by design, not 100% tested.
3. Crystal must meet Table 14 specifications.
4. VDD is only specified and characterized at 3.3V + 5%. VDDL may be powered at any value between 3.465 and 2.375.
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