Potens semiconductor corp.

Ver.1.00

2

PDD4956

40V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

---

---

V

IDSS

Drain-Source Leakage Current

VDS=40V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=20A

6

8.5

11

m



VGS=4.5V , ID=10A

8

11

16

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.8

2.5

V

gfs

Forward Transconductance

VDS=10V , ID=1A

---

5

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge

3 , 4

VDS=20V , VGS=4.5V , ID=10A

---

13

26

nC

Qgs

Gate-Source Charge

3 , 4

---

4

8

Qgd

Gate-Drain Charge

3 , 4

---

5.3

10

Td(on)

Turn-On Delay Time

3 , 4

VDD=20V , VGS=10V , RG=6

ID=1A

---

8

16

ns

Tr

Rise Time

3 , 4

---

3.2

8

Td(off)

Turn-Off Delay Time

3 , 4

---

26.4

52

Tf

Fall Time

3 , 4

---

3.8

8

Ciss

Input Capacitance

VDS=20V , VGS=0V , F=1MHz

---

1088

2000

pF

Coss

Output Capacitance

---

110

200

Crss

Reverse Transfer Capacitance

---

80

160

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

3

6



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

42

A

ISM

Pulsed Source Current

---

---

84

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=39A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.