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PDEB2594P Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDEB2594P Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 5 page  Potens semiconductor corp. Ver.1.02 1 PDEB2594P 20V Dual N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Drain Current – Continuous (TC=25℃) 24 A Drain Current – Continuous (TC=100℃) 15 A Drain Current – Continuous (TA=25℃) 12.5 A Drain Current – Continuous (TA=70℃) 10 A Drain Current – Continuous (TA=100℃) 7.9 A IDM Drain Current – Pulsed1 96 A PD Power Dissipation (TC=25℃) 27 W Power Dissipation – Derate above 25℃ 0.22 W/℃ Power Dissipation (TA=25℃) 2 W Power Dissipation – Derate above 25℃ 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ BVDSS RDSON ID 20V 8m 24A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 20V,24A, RDS(ON) =8m Ω @VGS = 4.5V Improved dv/dt capability Fast switching G-S ESD Protection Diode Embedded Green Device Available General Description Features Applications Handheld Instruments POL Applications Battery Protection Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted DFN3x3 Dual Pin Configuration D1/D2 G1 S1 S2 G2 S1 S1 S1 G1 S2 S2 S2 G2 D1/D2 |
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