Potens semiconductor corp.

Ver.1.02

2

PDEB2594P

20V Dual N-Channel MOSFETs

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction to ambient

---

62

℃/W

RθJC

Thermal Resistance Junction to case

---

4.55

℃/W

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=16V , VGS=0V , TJ=85℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±20

µA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance3

VGS=4.5V , ID=2.4A

6.0

6.7

8

m



VGS=4.0V , ID=2.4A

6.0

7.1

8.5

m



VGS=3.7V , ID=2.4A

6.5

7.3

9

m



VGS=3.1V , ID=2.4A

7.0

8

10.5

m



VGS=2.5V , ID=2.4A

8.0

9.2

12

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

0.5

0.65

1.5

V

gfs

Forward Transconductance

VDS=5V , ID=5A

---

15

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2,3

VDS=20V , VGS=4.5V , ID=5A

---

13.8

---

nC

Qgs

Gate-Source Charge2,3

---

2.1

---

Qgd

Gate-Drain Charge2,3

---

4.5

---

Td(on)

Turn-On Delay Time2,3

VDD=15V , VGS=10V , RG=6



ID=5A

---

28

---

ns

Tr

Rise Time2,3

---

64

---

Td(off)

Turn-Off Delay Time2,3

---

60

---

Tf

Fall Time2,3

---

55

---

Ciss

Input Capacitance

VDS=20V , VGS=0V , F=1MHz

---

1514

---

pF

Coss

Output Capacitance

---

178

---

Crss

Reverse Transfer Capacitance

---

145

---

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

24

A

ISM

Pulsed Source Current

---

---

48

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Thermal Characteristics

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings