Potens semiconductor corp.

Ver.1.00

2

PDEC09F0BZ

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

100

---

---

V

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=80V , VGS=0V , TJ=85℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±20

µA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=10A

---

32

38

m



VGS=4.5V , ID=8A

---

46

60

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

1.2

1.6

2.5

V

Dynamic and switching Characteristics3

Qg

Total Gate Charge

VDS=50V , VGS=10V , ID=7A

---

7

14

nC

VDS=50V , VGS=4.5V , ID=7A

---

4

8

Qgs

Gate-Source Charge

---

0.7

1.5

Qgd

Gate-Drain Charge

---

2

4

Td(on)

Turn-On Delay Time

VDD=50V , VGS=10V , RG=6



ID=7A

---

6

12

ns

Tr

Rise Time

---

10

20

Td(off)

Turn-Off Delay Time

---

20

40

Tf

Fall Time

---

13

25

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

360

700

pF

Coss

Output Capacitance

---

80

150

Crss

Reverse Transfer Capacitance

---

6

12

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

0.4

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

EAS

Single Pulse Avalanche Energy

VDD=50V, L=0.1mH, IAS=14A

9.8

---

---

mJ

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

16

A

ISM

Pulsed Source Current

---

---

32

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Trr

Reverse Recovery Time

VR=50V, IS=10A

di/dt=100A/µs, TJ=25℃

---

40

---

ns

Qrr

Reverse Recovery Charge

---

50

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=0.1mH,IAS=20A.,RG=25,Starting TJ=25℃.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Guaranteed Avalanche Energy