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PDEN69A8LS Datasheet(PDF) 1 Page - Potens Semiconductor Corp.

Part # PDEN69A8LS
Description  60V N-Channel MOSFETs
PDF  6 Pages
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Manufacturer  POTENS [Potens Semiconductor Corp.]
Direct Link  http://potens-semi.com/en/
Logo POTENS - Potens Semiconductor Corp.

PDEN69A8LS Datasheet(HTML) 1 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.00
1
PDEN69A8LS
60V N-Channel MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous (TA=25℃)
0.5
A
Drain Current
– Continuous (TA=70℃)
0.4
A
IDM
Drain Current
– Pulsed1
2
A
PD
Power Dissipation (TA=25℃)
1.56
W
Power Dissipation
– Derate above 25℃
12.5
mW/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
BVDSS
RDSON
ID
60V
3.5
0.5A
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
80
℃/W
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
 60V,0.5A, RDS(ON) =3.5
Ω@VGS=10V
 Improved dv/dt capability
 Fast switching
 Green Device Available
 G-S ESD Protection Diode Embedded
General Description
Features
Applications
 Motor Drive
 Power Tools
 LED Lighting
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
SOT23-3S Pin Configuration
D
G
S
D
S
G


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