Potens semiconductor corp.

Ver.1.00

2

PDEN69A8LS

60V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250

μA

60

---

---

V

IDSS

Drain-Source Leakage Current

VDS=60V , VGS=0V , TJ=25℃

---

---

1

μA

VDS=48V , VGS=0V , TJ=125℃

---

---

1

mA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±20

μA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=0.2A

---

2.3

3.5



VGS=4.5V , ID=0.1A

---

2.4

4



VGS=2.5V , ID=0.1A

---

3.2

9



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250

μA

0.9

1.35

1.8

V

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=30V , VGS=10V , ID=0.2A

---

1

1.5

nC

Qgs

Gate-Source Charge2 , 3

---

0.05

0.1

Qgd

Gate-Drain Charge2 , 3

---

0.5

0.75

Td(on)

Turn-On Delay Time2 , 3

VDD=30V , VGS=10V , RG=6



ID=0.2A

---

5

10

ns

Tr

Rise Time2 , 3

---

7

15

Td(off)

Turn-Off Delay Time2 , 3

---

16

25

Tf

Fall Time2 , 3

---

12

20

Ciss

Input Capacitance

VDS=30V , VGS=0V , F=1MHz

---

32

50

pF

Coss

Output Capacitance

---

15

30

Crss

Reverse Transfer Capacitance

---

7.5

15

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

0.5

A

ISM

Pulsed Source Current

---

---

1

A

VSD

Diode Forward Voltage

VGS=0V , IS=0.2A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

VR=50V, IS=0.5A

di/dt=100A/µs , TJ=25℃

---

20

---

ns

Qrr

Reverse Recovery Charge

---

7.5

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300

μs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings