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AT25DN256 Datasheet(PDF) 28 Page - Renesas Technology Corp

Part # AT25DN256
Description  256-Kbit, 2.3V Minimum SPI Serial Flash Memory with Dual-Read Support
PDF  39 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DN256 Datasheet(HTML) 28 Page - Renesas Technology Corp

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AT25DN256
DS-25DN256–039G–02/2022
Figure 12-9. Reset
13.
Electrical Specifications
13.3 DC Characteristics
SCK
CS
SI
SO
MSB
23
1
0
1111000
67
5
4
Opcode
Confirmation Byte In
10 11
9
814 15
13
12
0
MSB
1101000
0
High-impedance
13.1 Absolute Maximum Ratings*
Temperature under Bias. . . . . . . . -55
C to +125C
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended
periods may affect device reliability.
Storage Temperature . . . . . . . . . . -65
C to +150C
All Input Voltages
(including NC Pins)
with Respect to Ground . . . . . . . . . .-0.6V to +4.1V
All Output Voltages
with Respect to Ground . . . . . .-0.6V to VCC + 0.5V
13.2 DC and AC Operating Range
AT25DN256
Operating Temperature (Case)
Ind.
-40
C to 85C
VCC Power Supply
2.3V to 3.6V
Symbol
Parameter
Condition
2.3V to 3.6V
Units
Min
Typ
Max
IUDPD
Ultra-Deep Power-Down
Current
CS = VCC. All other inputs at 0V
or VCC
0.35
0.6
µA
IDPD
Deep Power-Down
Current
CS = VCC. All other inputs at 0V
or VCC
7.5
15
µA
ISB
Standby Current
CS = VCC. All other inputs at 0V
or VCC
25
40
µA
ICC1
(1)
Active Current, Low Power
Read (03h, 0Bh)
Operation
f = 1MHz; IOUT = 0mA
6
11
mA
f = 20MHz; IOUT = 0mA
7
11
mA



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