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AP4N80FP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP4N80FP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 6 page ![]() AP4N80FIP 800V N-Plance Enhancement Mode MOSFET AP4N80F/P Rve3.8 臺灣永源微電子科技有限公司 Description The AP4N80F/P series are from the innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance General Features VDS =800V,ID =4A RDS(ON) < @ VGS=10V Application 100% UIS Test Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free Package Marking and Ordering Information Absolute Maximum Ratings (TC=25℃unless otherwise noted) Product ID Pack Marking Qty(PCS) AP4N80F XXX YYYY 1000 AP4N80P XXX YYYY 1000 Symbol Parameter Rating Units VDS Drain-Source Voltage 800 V VGS Gate-Source Voltage +30 V ID@TC=25 ℃ Drain Current, VGS @ 10V3 4 A IDM Pulsed Drain Current1 16 A PD@TC=25 ℃ Total Power Dissipation 32.9 W PD@TA=25 ℃ Total Power Dissipation 1.92 W EAS Single Pulse Avalanche Energy4 8 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rthj-c Maximum Thermal Resistance, Junction-case 3.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Ω 2.5 AP4N80F AP4N80P TO-220F-3L TO-220-3L |
Similar Part No. - AP4N80FP |
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