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AP4N80FP Datasheet(PDF) 4 Page - A POWER MICROELECTRONICS

Part # AP4N80FP
Description  800V N-Plance Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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Logo APME - A POWER MICROELECTRONICS

AP4N80FP Datasheet(HTML) 4 Page - A POWER MICROELECTRONICS

  AP4N80FP Datasheet HTML 1Page - A POWER MICROELECTRONICS AP4N80FP Datasheet HTML 2Page - A POWER MICROELECTRONICS AP4N80FP Datasheet HTML 3Page - A POWER MICROELECTRONICS AP4N80FP Datasheet HTML 4Page - A POWER MICROELECTRONICS AP4N80FP Datasheet HTML 5Page - A POWER MICROELECTRONICS AP4N80FP Datasheet HTML 6Page - A POWER MICROELECTRONICS  
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AP4N80FIP
800V N-Plance Enhancement Mode MOSFET
AP4N80F/P Rve3.8
臺灣永源微電子科技有限公司
0.37Ω
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Total Power Dissipation
Fig 12. Normalized BVDSS v.s. Junction
Temperature
0
400
800
1200
1600
0
100
200
300
400
500
600
700
800
900
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
0
8
16
24
32
Q G , Total Gate Charge (nC)
I D =4A
V DS =640V
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.001
0.01
0.1
1
10
100
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0
10
20
30
40
0
50
100
150
T C , Case Temperature (
o C )
Operation in this area
limited by RDS(ON)
0
0.4
0.8
1.2
1.6
2
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =1mA
.



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