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AP5G03DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP5G03DF
Description  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP5G03DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP5G03DF
30V N+P-Channel Enhancement Mode MOSFET
AP5G03DF RVE1.1
永源微電子科技有限公司
Description
The AP5G03DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =8.2A
RDS(ON) < 25mΩ @ VGS=10V （Type：18mΩ）
VDS = -30V ID =-7.5A
RDS(ON) < 48mΩ @ VGS=-10V（Type：38mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP5G03DF
PDFN3*3-8L
AP5G03DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
8.2
7.5
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
5.1
-4.2
A
IDM
Pulsed Drain Current2
25
-24
A
EAS
Single Pulse Avalanche Energy3
22
22
mJ
IAS
Avalanche Current
21
11
A
PD@TA=25℃
Total Power Dissipation4
18
18
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
60
℃
/W


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