AP5G03DF

30V N+P-Channel Enhancement Mode MOSFET

AP5G03DF RVE1.1

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

-35

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.02

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-4.1A

---

38

48

mΩ

VGS=-4.5V , ID=-3.5A

---

52

60

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-1.7

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.32

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-24V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-3A

---

4.7

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

24

---

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-5A

---

5.22

---

nC

Qgs

Gate-Source Charge

---

1.25

---

Qgd

Gate-Drain Charge

---

2.3

---

Td(on)

Turn-On Delay Time

VDD=-15V, VGS=-10V ,

RG=3.3Ω

ID=-1A

---

18.4

---

ns

Tr

Rise Time

---

11.4

---

Td(off)

Turn-Off Delay Time

---

39.4

---

Tf

Fall Time

---

5.2

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

463

---

pF

Coss

Output Capacitance

---

82

---

Crss

Reverse Transfer Capacitance

---

68

---

IS

Continuous Source Current1,6

VG=VD=0V , Force Current

---

---

-4

A

ISM

Pulsed Source Current2,6

---

---

-24

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

Note :

1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-24V,VGS=-10V,L=0.1mH,IAS=-11A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.