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AP5N15MSI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP5N15MSI
Description  150V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP5N15MSI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP5N15MSI
150V N-Channel Enhancement Mode MOSFET
AP5N15MSI RVE1.0
永源微電子科技有限公司
Description
The AP5N15MSI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 150V ID =5A
RDS(ON) < 320mΩ@ VGS=10V （Type：260mΩ）
Application
Automative lighting
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP5N15MSI
SOT -223-3L
AP5N15MSI XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Drain Current, VGS @ 10V
5
A
ID@TC=100
℃
Drain Current, VGS @ 10V
3.1
A
IDM
Pulsed Drain Current1
15
A
PD@TC=25
℃
Total Power Dissipation
2
W
PD@TA=25
℃
Total Power Dissipation3
1.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Maximum Thermal Resistance, Junctionambient
70
℃/W
RθJC
Maximum Thermal Resistance, Junction-case
36
℃/W


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