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M27V160 Datasheet(PDF) 1 Page - STMicroelectronics |
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M27V160 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  1/15 March 2000 M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION s ACCESS TIME: 100ns s BYTE-WIDE or WORD-WIDE CONFIGURABLE s 16 Mbit MASK ROM REPLACEMENT s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60 µA s PROGRAMMING VOLTAGE: 12.5V ± 0.25V s PROGRAMMING TIME: 50 µs/word s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B1h DESCRIPTION The M27V160 is a low voltage 16 Mbit EPROM of- fered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 2 Mbit words of 8 bit or 1 Mbit words of 16 bit. The pin-out is compatible with a 16 Mbit Mask ROM. The M27V160 operates in the read mode with a supply voltage as low as 3V. The decrease in op- erating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to ex- pose the chip to ultraviolet light to erase the bit pat- tern. A new pattern can then be written rapidly to the device by following the programming proce- dure. For applications where the content is programmed only one time and erasure is not required, the M27V160 is offered in PDIP42 and SO44 packag- es. 44 1 1 42 1 42 FDIP42W (F) SO44 (M) PDIP42 (B) Figure 1. Logic Diagram AI01898 20 A0-A19 BYTEVPP Q0-Q14 VCC M27V160 G E VSS 15 Q15A–1 |
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Similar Description - M27V160 |
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