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AP20P02DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP20P02DF
Description  -20V P-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP20P02DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20P02DF
-20V P-Channel Enhancement Mode MOSFET
AP20P30DF Rve3.8
臺灣永源微電子科技有限公司
The AP20P02DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -20V ID =-20A
RDS(ON) < 9mΩ @ VGS=-10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20P02DF
20P30
3000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±
8
V
ID@TC=25℃
Continuous Drain Current, VGS @ -4.5V1
-20
A
ID@TC=70℃
Continuous Drain Current, VGS @ -4.5V1
-18
A
IDM
Pulsed Drain Current2
-100
A
PD@TC=25℃
Total Power Dissipation3
29
W
PD@TC=70℃
Total Power Dissipation3
19
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
75
℃
/W
RθJA
Thermal Resistance Junction-Ambient 1 (t
≤10s)
40
℃
/W
RθJC
Thermal Resistance Junction-Case1
4.2
℃
/W
Description
PDFN3*3-8L


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