AP20P02DF

-20V P-Channel Enhancement Mode MOSFET

AP20P30DF Rve3.8

臺灣永源微電子科技有限公司

Electrical Characteristics (TA=25℃ unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-20

-24

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.012

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-4.5V , ID=-10A

---

6.5

9

mΩ

VGS=-2.5V , ID=-8A

---

8.7

11.5

VGS=-1.8V , ID=-6A

---

13

15

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.3

-1.0

V

△VGS(th)

VGS(th) Temperature Coefficient

---

2.94

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-20V , VGS=0V , TJ=25℃

---

---

1

uA

IGSS

Gate-Source Leakage Current

VGS=±8V , VDS=0V

---

---

±

100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-10A

---

43

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-

10A

---

63

---

nC

Qgs

Gate-Source Charge

---

9.1

---

Qgd

Gate-Drain Charge

---

13

---

Td(on)

Turn-On Delay Time

VDD=-10V , VGS=-4.5V ,

RG=3.3 , ID=-10A

---

15.8

---

ns

Tr

Rise Time

---

76.8

---

Td(off)

Turn-Off Delay Time

---

193

---

Tf

Fall Time

---

186.4

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

5783

---

pF

Coss

Output Capacitance

---

509

---

Crss

Reverse Transfer Capacitance

---

431

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

-10.7

A

ISM

Pulsed Source Current2,4

---

---

-60

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1.2

V

trr

Reverse Recovery Time

IF=-10A , dI/dt=100A/µs ,

TJ =25℃

---

27

---

nS

Qrr

Reverse Recovery Charge

---

17.8

---

nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150℃ junction temperature

4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

-

0.6